Installation type | Surface mount |
packing | TR |
series | - |
Part status | stop production |
Speed | Rapid recovery=< 500ns,> 200mA(Io) |
working temperature | - |
Encapsulation/Housing | 2-XDFN |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
Supplier device packaging | 2-DSN(1x0.6),(0402) |
Diode type | Schottky barrier |
Voltage DC reverse (Vr) (maximum) | 30 V |
Current average rectification (Io) | 1.5A(DC) |
Voltage at different If - forward (Vf) | 580 mV @ 1.5 A |
Reverse recovery time (trr) | 25 ns |
Current - reverse leakage at different Vr | 80 µA @ 30 V |
Capacitance at different Vr and F | 60pF @ 0V,1MHz |